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| Composite Transistors XP5555 Silicon NPN epitaxial planer transistor Unit: mm 0.425 1.250.1 0.425 0.20.05 For high speed switching 2.10.1 0.65 q q Two elements incorporated into one package. Reduction of the mounting area and assembly cost by one half. 2.00.1 s Features 0.65 1 2 3 6 5 4 0.90.1 q 2SC4782 x 2 elements 0.70.1 0 to 0.1 0.20.1 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Rating Emitter to base voltage of element Collector current Peak collector current Total power dissipation Overall Junction temperature Storage temperature Symbol VCBO VCES VEBO IC ICP PT Tj Tstg (Ta=25C) Ratings 25 20 5 200 300 150 150 -55 to +150 Unit V V V mA mA mW 1 : Emitter (Tr1) 2 : Base (Tr1) 3 : Base (Tr2) 4 : Collector (Tr2) 5 : Emitter (Tr2) 6 : Collector (Tr1) EIAJ : SC-88 S-Mini Type Package (6-pin) Marking Symbol: EO Internal Connection 1 Tr1 6 5 4 C C 2 3 Tr2 s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Collector output capacitance Turn-on time Turn-off time Storage time *1 (Ta=25C) Symbol ICBO IEBO hFE VCE(sat) VBE(sat) fT Cob ton toff tstg *1 Conditions VCB = 10V, IE = 0 VEB = 4V, IC = 0 VCE = 1V, IC = 10mA IC = 10mA, IB = 1mA IC = 10mA, IB = 1mA VCB = 10V, IE = -10mA, f = 200MHz VCB = 10V, IE = 0, f = 1MHz min typ max 0.1 0.1 0.12 -0.02 s Basic Part Number of Element 0.2 +0.05 Unit A A 40 0.17 0.76 200 2 17 15 7 200 0.25 1.0 500 4 V V MHz pF ns ns ns Switching time measuring circuit 1 Composite Transistors Switching time measuring circuit ton, toff Test Circuit 0.1F Vout 220 Vin=10V 50 Vbb=-3V 3.3k 3.3k 50 Vin=10V Vcc=3V 50 Vbb=2V A 0.1F 910 500 500 XP5555 tstg Test Circuit 0.1F 1k 90 Vout Vcc=10V Wave form at A Vin 10% 10% 90% 90% ton toff Vin 10% Vout Vout tstg 10% PT -- Ta 250 240 IC -- VCE 10 VCE(sat) -- IC Collector to emitter saturation voltage VCE(sat) (V) Ta=25C IC/IB=10 Total power dissipation PT (mW) Collector current IC (mA) 200 200 1 160 IB=3.0mA 120 2.5mA 2.0mA 80 1.5mA 1.0mA 40 0.5mA 150 Ta=75C 0.1 -25C 25C 100 0.01 50 0 0 20 40 60 80 100 120 140 160 0 0 0.2 0.4 0.6 0.8 1.0 1.2 0.001 1 10 100 1000 Ambient temperature Ta (C) Collector to emitter voltage VCE (V) Collector current IC (mA) VBE(sat) -- IC 100 IC/IB=10 300 hFE -- IC 6 Cob -- VCB Collector output capacitance Cob (pF) VCE=1V f=1MHz IE=0 Ta=25C Base to emitter saturation voltage VBE(sat) (V) Forward current transfer ratio hFE 250 5 10 200 Ta=75C 150 25C -25C 4 25C 1 Ta=-25C 75C 3 100 2 0.1 50 1 0.01 1 10 100 1000 0 0.1 0 1 10 100 1 10 100 Collector current IC (mA) Collector current IC (mA) Collector to base voltage VCB (V) 2 |
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